Growth of in-rich in x Al 1-x N films on (0001) sapphire by RF-MBE and their properties

Journal of Electronic Materials

Volumn 36, Issue 10, 2007, Pages 1313-1319

  Naoi, H ^a   Fujiwara, K ^a   Takado, S ^a   Kurouchi, M ^a   Muto, D ^a   Araki, T ^a   Na, H ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Bowing parameter; In rich In x Al 1 x N; Optical properties; Radiofrequency plasma assisted molecular beam epitaxy (RF MBE); Substrate nitridation; X ray diffraction

Indexed keywords

BOWING PARAMETER; SUBSTRATE NITRIDATION;

ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SAPPHIRE;

EID: 34848827152     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0195-4     Document Type: Article

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