The future of high-performance CMOS: Trends and requirements

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 30-37

  Khakifirooz, Ali ^a   Antoniadis, Dimitri A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DELAY CIRCUITS; MOSFET DEVICES; NETWORKS (CIRCUITS);

ANALYTICAL EXPRESSIONS; CARRIER VELOCITIES; CIRCUIT POWERS; CMOS TECHNOLOGIES; DEVICE GEOMETRIES; ELECTROSTATIC INTEGRITIES; INTRINSIC TRANSISTORS; KEY PERFORMANCE PARAMETERS; MOS FETS; PARASITIC CAPACITANCES; PARASITICS; SCALING SCENARIOS; TIME- DELAYS; TRANSISTOR CHARACTERISTICS;

TRANSISTORS;

EID: 58049090749     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681693     Document Type: Conference Paper

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