Modeling ionizing radiation effects in solid state materials and CMOS devices

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2008, Pages 273-280

  Barnaby, H J ^a   Mclain, M L ^a   Esqueda, I S ^a   Chen, X J ^a  

^a AZ 85281   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL CALCULATIONS; CLOSED FORMS; CMOS DEVICES; CMOS TECHNOLOGIES; COMPREHENSIVE MODELS; DEFECT DISTRIBUTIONS; DEFECT FORMATIONS; DOPING LEVELS; EXPERIMENTAL DATUMS; GENERAL EQUATIONS; INTERFACE TRAPS; IONIZING RADIATION EFFECTS; MODELING APPROACHES; MOS FETS; NEW APPROACHES; NON UNIFORMS; RADIATION TOLERANCES; SHALLOW TRENCH ISOLATIONS; SIDE-WALLS; SOLID STATES; SUB MICRONS; TRAPPED CHARGES;

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; IONIZING RADIATION; LEAKAGE CURRENTS; MOSFET DEVICES; RADIATION; RADIATION SHIELDING; RADIOACTIVITY; SEMICONDUCTING SILICON; SOLID STATE DEVICES; SPEECH ANALYSIS;

RADIATION EFFECTS;

EID: 57849140228     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2008.4672075     Document Type: Conference Paper

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