Total-ionizing-dose effects in modern CMOS technologies

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3103-3121

  Barnaby, H J ^a,b  

^a IEEE   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

1 f noise; High k; Interface traps; Oxide trapped charge; Radiation; RILC; Shallow trench isolation; Silicon on insulation (SOI); Total ionizing dose

Indexed keywords

INTERFACE TRAPS; MOORE'S LAW; OXIDE TRAPPED CHARGE; RADIATION THREATS; SHALLOW TRENCH ISOLATION; SUBMICRON CMOS DEVICES;

HARDNESS; INTERFACES (MATERIALS); IONIZING RADIATION; MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS; SILICON ON INSULATOR TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 33846289564     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885952     Document Type: Conference Paper

References (66)

1. "Emerging research devices," International Roadmap for Semiconductors 2003.
2. G. E. Moore, "Cramming more components onto integrated circuits," Electronics, vol. 8, 1965.
3. A. S. Sedra and K. C. Smith, Microelectron. Circuits, 5th ed. New York, Oxford: , 2004.
4. Y. Taur and T. H. Ning, Modern VLSI Devices. New York: Cambridge Univ. Press, 1998.
5. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986.
6. J. P. Colinge, "Silicon-on-Insulator technology: Overview and device physics," Proc. 2001 IEEE NSREC Short Course, 2001.
7. S. Cristoloveanu, "SOI technology: Renaissance or science fiction?," in Future Trends in Microelectronics, S. Luryi, J. Xu, and A. Zaslavsky, Eds. New York: Wiley, 1999.
8. G. E. Moore, "No exponential is forever," in Int. Solid State Circuits Conf., 2003.
9. S. Thompson, P. Packan, and M. Borh, "MOS scaling: Challenges for the 21st century," Intell. Tech. J., vol. 3rd Qtr.'98, 1998.
10. J. R. Schwank, "Basic mechanisms of radiation effects in the natural space environment," Proc. 1994 NSREC Short Course, 1994.
11. T. R. Oldham, "Analysis of damage in MOS devices in several radiation environments," IEEE Trans. Nucl. Sci., vol. 31, pp. 1236-1241, 1984.
12. J. R. Srour, "Basic mechanisms of radiation effects on electronic materials, devices, and integrated circuits," Proc. 1983 IEEE NSREC Short Course, 1983.
13. P. V. Dressendorfer, "Basic mechanisms for the new millennium," Proc. 1999 IEEE NSREC Short Course, 1998.
14. F. B. McLean and T. R. Oldham, "Basic mechanisms of radiation effects in electronic materials and devices," Harry Diamond Lab. Tech. Rep., vol. HDL-TR, p. 2129, 1987.
15. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, "Charge yield for cobalt-60 and 10-keV x-ray irradiations," IEEE Trans. Nucl. Sci., vol. 38, pp. 1187-1194, 1991.
16. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, and F. W. Sexton, "Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices," IEEE Trans. Nucl. Sci., vol. 37, pp. 1632-1640, 1990.
17. T. R. Oldham, "Switching oxide traps," in Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices, R. D. Schrimpf and D. M. Fleetwood, Eds. Singapore: World Scientific, 2004.
18. D. M. Fleetwood, "Border traps" in MOS devices," IEEE Trans. Nucl. Sci., vol. 39, pp. 269-271, 1992.
19. D. M. Fleetwood, "Fast and slow border traps in MOS devices," IEEE Trans. Nucl. Sci., vol. 43, pp. 779-786, 1996.
20. S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, "Physical model for enhanced interface-trap formation at low dose rates," IEEE Trans. Nucl. Sci., vol. 49, pp. 2650-2655, 2002.
21. L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, and S. T. Pantelides, "Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias," IEEE Trans. Nucl. Sci., vol. 52, pp. 2265-2271, 2005.
22. J. R. Chavez, S. P. Karna, K. Vanheusden, C. P. Brothers, R. D. Pugh, B. K. Singaraju, W. L. Warren, and R. A. B. Devine, "Microscopic structure of the E' center in amorphous SiO2," IEEE Trans. Nucl. Sci., vol. 44, pp. 1799-1803, 1997.
23. D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, D. Schrimpf, and S. T. Pantelides, "Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices," IEEE Trans. Nucl. Sci., vol. 49, pp. 2674-2683, 2002.
24. S. P. Karna, A. C. Pineda, R. D. Pugh, W. M. Shedd, and T. R. Oldham, "Electronic structure theory and mechanisms of the oxide trapped hole annealing process," IEEE Trans. Nucl. Sci., vol. 47, pp. 2316-2321, 2000.
25. C. J. Nicklaw, Z. Y. Lu, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2," IEEE Trans. Nucl. Sci., vol. 49, pp. 2667-2673, 2002.
26. S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, "Reactions of hydrogen with Si-SiO2 interfaces," IEEE Trans. Nucl. Sci., vol. 47, pp. 2262-2268, 2000.
27. J. K. Rudra and W. B. Fowler, "Oxygen vacancy and the E' center in crystalline SiO2," Phys. Rev. B, Condens. Matter, vol. 35, pp. 8223-, 1987.
28. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, "1/f noise and radiation effects in MOS devices," IEEE Trans. Electron Devices, vol. 41, pp. 1953-1964, 1994.
29. R. C. Lacoe, J. V. Osborn, R. Koga, S. Brown, and J. Gambles, "Total dose tolerance of the commercial TSMC 0.35 mm CMOS process," in 2007 IEEE Radiation Effects Data Workshop, 2001, vol. IEEE cat no. 01TH8588, pp. 72-77.
30. F. T. Brady, J. D. Maimon, and M. J. Hurt, "A scaleable, radiation hardened shallow trench isolation," IEEE Trans. Nucl. Sci., vol. 46, pp. 1836-1840, 1999.
31. M. Turowski, A. Raman, and R. D. Schrimpf, "Nonuniform total-doseinduced charge distribution in shallow-trench isolation oxides," IEEE Trans. Nucl. Sci., vol. 51, pp. 3166-3171, 2004.
32. J. Wong, J. Weil, C. Whiting, Y. Chien, B. Forth, J. Hart, G. Matteson, H. Mochiki, and M. Hagihara, "A hardmask STI etch process for 0.13 mm logic technology and beyond," presented at the IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Munich, Germany, 2001, presented at, unpublished.
33. S. E. Thompson and T. Nishida, "Tunneling and thermal emission of elections from a distribution of shallow traps in SiO2," Appl. Phys. Lett., vol. 58, pp. 1262-, 1991.
34. P. M. Lenahan, N. A. Bohna, and J. P. Campbell, "Radiation-induced interface traps in MOS devices: Capture cross section and density of states of Pbl silicon dangling bond centers," IEEE Trans. Nucl. Sci., vol. 49, pp. 2708-2712, 2002.
35. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, "Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers," J. Appl. Phys., vol. 52, pp. 879-, 1981.
36. N. S. Saks and D. B. Brown, "Interface trap formation via the two-stage H+ process," IEEE Trans. Nucl. Sci., vol. 36, pp. 1848-, 1989.
37. S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Effects of hydrogen motion on interface trap formation and annealing," IEEE Trans. Nucl. Sci., vol. 51, pp. 3158-3165, 2004.
38. D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, "Border traps: Issues for MOS radiation response and long-term reliability," Microelectron. Ret., vol. 35, p. 403, 1995.
39. R. E. Paulsen, R. R. Siergiej, M. L. French, and M. H. White, "Observation of near-interface oxide traps with the charge pumping technique," IEEE Electron Device Lett., vol. 13, pp. 627-629, 1992.
40. T. L. Meisenheimer and D. M. Fleetwood, "Effect of radiation-induced charge on 1/f noise in MOS devices," IEEE Trans. Nucl. Sci., vol. 37, pp. 1696-1702, 1990.
41. K. W. Chew, K. S. Yeo, and S. F. Chu, "Impact of technology scaling on the 1/f noise of thin and thick gate oxide deep submicron NMOS transistors," IEE Proc. Circuits Devices Syst., vol. 151, pp. 415-421, 2004.
42. D. M. Fleetwood and J. H. Scofield, "Evidence that similar point defects cause 1/f noise and radiation-induced hole trapping in MOS transistors," Phys. Rev. Lett., vol. 64, pp. 579-582, 1990.
43. H. Scofield, T. P. Doerr, and D. M. Fleetwood, "Correlation of preir-radiation 1/f noise and postirradiation threshold voltages shifts due to oxide trapped charge in MOS transistors," IEEE Trans. Elect. Dev., vol. 36, pp. 1946-1953, 1989.
44. N. S. Saks and M. G. Ancona, "Generation of interface states by ionizing radiation at 80 K measured by charge pumping and subthreshold slope techniques," IEEE Trans. Nucl. Sci., vol. 34, pp. 1172-1354, 1987.
45. A. Cester and A. Paccagnella, "Switching oxide ionizing radiation effects on ultra-thin oxide MOS structures," in Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices, R. D. Schrimpf and D. M. Fleetwood, Eds. Singapore: World Scientific, 2004.
46. R. C. Lacoe, D. C. Mayer, J. V. Osborn, and G. Yabiku, "Total dose hardness of three commercial CMOS microelectronics foundries," in Proc. 4th RADECS, 1997, pp. 265-270.
47. R. C. Lacoe, "CMOS scaling design principles and hardening by design methodology," NSREC Short Course, 2003.
48. E. Nicollian and J. Brews, Metal Oxide Semiconductor Physics and Technology. New York: Wiley, 1982.
49. D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation effects at low electric field in thermal, simox, and bipolar-base oxides," IEEE Trans. Nucl. Sci., vol. 43, pp. 2537-2546, 1996.
50. A. Cester, S. Gerardin, A. Paccagnella, J. R. Schwank, G. Vizkelethy, A. Candelori, and G. Ghidini, "Drain current decrease in MOSFETs after heavy ion irradiation," IEEE Trans. Nucl. Sci., vol. 51, pp. 3150-3157, 2004.
51. W. Snapp, "DARPA rad-hard-by-design program results," in Proc. GOMAC Tech 2006, San Diego, CA, 2006.
52. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, pp. 2584-2592, 1998.
53. I. S. Esqueda, H. J. Barnaby, and M. L. Alles, "Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies," IEEE Trans. Nucl. Sci., vol. 52, pp. 2259-2264, 2004.
54. O. Flament, A. Torres, and V. Ferlet-Cavrois, "Bias dependence of FD transistor response to total dose irradiation," IEEE Trans. Nucl. Sci., vol. 50, pp. 2316-, 2003.
55. O. Musseau andV. Ferlet-Cavrois, "Silicon-on-insulatortechnologies: Radiation effects," NSREC Short Course, 2001.
56. P. Paillet, M. Gaillardin, V. Ferlet-Cavrois, A. Torres, O. Faynot, C. Jahan, L. Tosti, and S. Cristoloveanu, "Total ionizing dose effects on deca-nanometer fully depleted SOI devices," IEEE Trans. Nucl. Sci., vol. 52, pp. 2345-2352, 2005.
57. C. Chen, M. Matloubian, and R. Sundraesan, "Single-transistor latch in SOI MOSFETs," IEEE Electron Device Lett., vol. 9, pp. 636-638, 1988.
58. H. D. Xiong, D. M. Fleetwood, and J. R. Schwank, "Low-frequency and radiation response in buried oxides in SOI nMOS transistors," IEE Proc. Circuits, Devices, Syst., vol. 151, pp. 181-, 2004.
59. M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, and A. Candelori, "Comparison of ionizing radiation effects in 0.18 and 0.25 mm CMOS technologies for analog applications," IEEE Trans. Nucl. Sci., vol. 50, pp. 1827-1833, 2003.
60. L. Larcher, A. Paccagnella, M. Ceschia, and G. Ghidini, "A model of radiation induced leakage current (RILC) in ultra-thin gate oxides," IEEE Trans. Nucl. Sci., vol. 46, pp. 1553-1561, 1999.
61. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, and G. Ghidini, "Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2375-2382, 1998.
62. B. Wang, J. Suehle, E. Vogel, J. Conley, C. Weintraub, A. Johnston, and J. Bernstein, "Latent reliability degradation of ultra-thin oxides after heavy ion and gamma-ray irradiation," in Proc. Integr. Rel. Workshop Final Rep., 2001, pp. 16-19.
63. J. A. Felix, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, E. P. Gusev, and C. D'Emic, "Effects of radiation and charge trapping on the reliability of high-k gate dielectrics," Microelectron. Rel., 2004.
64. N. Saks, M. Ancona, and J. Modolo, "Radiation effects in MOS capacitors with very thin oxides at 80 K," IEEE Trans. Nucl. Sci., vol. 31, pp. 1249-1255, 1984.
65. G. Dunn and P. W. Wyatt, "Reoxidized nitrided oxide for radiation-hardened MOS devices," IEEE Trans. Nucl. Sci., vol. 36, pp. 2161-2168, 1989.
66. J. A. Felix, D. M. Fleetwood, D. M. Schrimpf, R. D. Hong, J. G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, "Total dose radiation response of hafnium silicate capacitors," IEEE Trans. Nucl. Sci., vol. 49, p. 49, 2002.