Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2210-2217

  McLain, Michael ^a,b   Barnaby, Hugh J ^a,b   Holbert, Keith E ^a,b   Schrimpf, Ronald D ^a,c   Shah, Harshit ^b   Amort, Anthony ^d   Baze, Mark ^d   Wert, Jerry ^d  

^a IEEE   (United States)

^b Arizona State University   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d BOEING COMPANY   (United States)

Author keywords

I O transistors; Off state leakage; Oxide trapped charge; p type body doping; Regular threshold; Total ionizing dose

Indexed keywords

I/O TRANSISTORS; OXIDE TRAPPED CHARGE; TOTAL IONIZING DOSE;

CMOS INTEGRATED CIRCUITS; IONIZING RADIATION; LEAKAGE CURRENTS; MOSFET DEVICES; RADIATION EFFECTS; TRANSISTORS;

CIRCUIT THEORY;

EID: 37249001858     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908461     Document Type: Conference Paper

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