Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2651-2658

  Brisset, C ^a   Ferlet Cavrois, V ^a   Flament, O ^a   Musseau, O ^b   Leray, J L ^b   Pelloie, J L ^b   Escoffier, R ^b   Michez, A ^c   Cirba, C ^c   Bordure, G ^c  

^a CEA DIF   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DOSIMETRY; FINITE ELEMENT METHOD; LEAKAGE CURRENTS; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

TRAPPED CHARGE DENSITY;

MOSFET DEVICES;

EID: 0030349737     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556849     Document Type: Article

References (21)

1. E. Kooi, "The invention of the LOCOS", IEEE case histories of achievement in science and technology, the institute of electrical and electronics, engineers, inc, NewYork Volume 1,1991.
2. E. H. Nicollian and J. R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology. ", New-York : Wiley, 1982.
3. F. B. McLean, H. E. Boesch Jr. , T. R. Oldham, "Electronhole generation, transport and trapping in SKV', in ionizing radiation effects in MOS devices and circuits, T. Ma and P. V. Dressendorfer, eds New-York : Wiley Interscience, p 87,1990.
4. J. L. Leray, "Contribution àl'étude des phénomènes induits par les rayonnements ionisants dans les structures à effets de champ au silicium ou àl'arseniure de gallium utilisés en microélectronique", Thèse d'Etat, Univ. Paris Sud, Dec. 1989.
5. D. J. Forster, "Subthreshold currents in CMOS transistors made on oxygen implanted silicon", Elect. Lett. Vol. 19, No. 17, p 684, 1983.
6. R. Escoffier, A. Michez, C. Cirba, G. Bordure, "Radiation induced shift study in parasitic MOS structures by 2D numerical simulation", 3n" European Conference on Radiation and their Effects on Devices and Systems (RADECS'95), to be published.
7. V. Vasudevan, J. Vasi, "A two-dimensional numerical Simulation of oxide charge build-up in MOS transistors due to radiation", IEEE Trans, on Electron Devices, Vol. 41, N°3, p 383,1994.
8. S. M. Sze, "Physics of semiconductor devices", NewYork : Wiley, 1981.
9. R. C. Hughes, "Charge-Carrier Transport Phenomena in Amorphous SiOj : Direct measurement of the Drift Mobility and Lifetime," Phys. Rev. Lett. 30, p 1333, 1973.
10. R. C. Hughes, "Time Resolved Hole Transport hi cc-SiCV, Phys. Rev. B-15,4, p 2012, Feb. 1977
11. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, K. L. Hughes, "Charge yield for 60Co and 10 keV X-Ray irradiations of MOS devices", IEEE Trans. Nucl. Sei. , Vol 38, p 1187,1991.
12. A. R. Stivers, C. T. Sah, "A study of oxide traps and interface states of the silicon-silicon dioxide interface", J. Appl Phys. , N°51, p 6292, December 1981.
13. P. Paillet, D. Hervé, J. L. Leray, "Evidence of negative charge trapping in high temperature annealed thermal oxide", IEEE Trans. Nucl. Sei. , Vol 41, N°3, p 473, June 1994.
14. R. J. Krantz, L. W. Aukerman, T. C. Zietlow, "Applied field and total dose dependence of trapped charge buildup in MCS devices", IEEE Trans. Nucl. Sei. , Vol 34, N°6, p 1196, June 1987.
15. C. R. Vieswanathan, J. Maserjian, "Model for thickness dependence of radiation charging in MOS structures", IEEE Trans. Nucl. Sei. , Vol 23, N°6, p 1540, June 1976.
16. E. Durand, "Electrostatique", tome II, eds Masson Paris, 1966.
17. C. Marton, "Advances in electronics and electron physics", Volume 58, Academic press, 1982
18. T. C. Wu, w. T. Stacy, K. N. Ritz, "The influence of the LOCOS processing parameters on the shape of the bird's beak structure", J. Electrochem. Soc. , Vol. 130, p 1563, 1983.
19. P. Sallagoity, M. Ada-Hanifi, M. Paoli, M. Haond, "Analysis of parasitic effects in advanced isolation schemes for deep sub micron CMOS technologies. ", Proceedings of the 25 " European Solid State Device Research Conference (ESSDERC'95), The Hague, p 375, September 95.
20. J. R. Brews, "A charge sheet model of the MOSFET", Solid State Electronics, Vol 21, p. 345, 1978.
21. F. Van de Wiele, "A long-channel MOSFET model", Solid State Electronics, Vol 22, p. 991,1979.