Physics-based mathematical conditioning of he MOSFET surface potential equation

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1196-1200

  Wu, Weimin ^a   Chen, Ten Lon ^a   Gildenblat, Gennady ^a   McAndrew, Colin C ^b  

^a The Center for Nanotechnology Education and Utilization   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMREF SPLITTING; MATHEMATICAL CONDITIONING; SURFACE POTENTIAL; SURFACE POTENTIAL EQUATION;

COMPUTER SIMULATION; ELECTRIC POTENTIAL; INTEGRAL EQUATIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS CAPACITORS; PERMITTIVITY; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 4344683399     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829902     Document Type: Article

References (14)

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