Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 1-6

  Wang, Ruonan ^a   Cai, Yong ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Enhancement depletion mode HEMT; Fluorine plasma treatment; High temperature digital integrated circuits; Planar process

Indexed keywords

DIGITAL ARITHMETIC; DIGITAL INTEGRATED CIRCUITS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; PLASMA APPLICATIONS; PLASMA STABILITY; PLASMAS; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY;

ALGAN/GAN; DEVICE ISOLATIONS; DEVICE PERFORMANCES; ELECTRON MOBILITY TRANSISTORS; ENHANCEMENT/DEPLETION-MODE HEMT; FET LOGICS; HIGH TEMPERATURES; HIGH-TEMPERATURE DIGITAL INTEGRATED CIRCUITS; MESA ETCHINGS; NOISE MARGINS; PLANAR PROCESS; PLANAR PROCESSES; PLASMA TREATMENTS; ROOM TEMPERATURES; STABLE OPERATIONS; TEMPERATURE DEPENDENCES; THERMAL STABILITIES;

DIGITAL CIRCUITS;

EID: 57449102917     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.001     Document Type: Article

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