Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1474-1477

  Jia, Shuo ^a   Cai, Yong ^a   Wang, Deliang ^a   Zhang, Baoshun ^a   Lau, Kei May ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Enhancement mode; Fluoride; HEMT; Plasma treatment; Silicon substrate; Threshold voltage

Indexed keywords

ANNEALING; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

FLUORIDE-BASED PLASMA TREATMENT; GATE REGION; PLASMA TREATMENT; POSTGATE ANNEALING; SILICON SUBSTRATE;

SUBSTRATES;

EID: 33744817666     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.873881     Document Type: Article

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