Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1662-1666

  Oishi, Toshiyuki ^a   Miura, Naruhisa ^a   Suita, Muneyoshi ^a   Nanjo, Takuma ^a   Abe, Yuji ^a   Ozeki, Tatsuo ^a   Ishikawa, Hiroyasu ^b   Egawa, Takashi ^b   Jimbo, Takashi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; MONTE CARLO METHODS; ZINC;

SHEET RESISTANCE;

ION IMPLANTATION;

EID: 0042512184     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590412     Document Type: Article

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