Oxygen implant isolation of n-GaN field-effect transistor structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2015-2018

  Dang, G ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844454142     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590864     Document Type: Article

References (5)

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