Magnetoresistive random access memory: The path to competitiveness and scalability

Proceedings of the IEEE

Volumn 96, Issue 11, 2008, Pages 1786-1798

  Jian Gang, Z H U ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Giant magnetoresistance; Magnetic random access memory (MRAM); Magnetic switching; Magnetic tunnel junction; Magnetoresistance; Nonvolatile memory; Spin polarization; Spin torque transfer; Tunneling magnetoresistance

Indexed keywords

GIANT MAGNETORESISTANCE; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SPIN POLARIZATION; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE MEMORY; SPIN TORQUE TRANSFER; TUNNELING MAGNETORESISTANCE;

MRAM DEVICES;

EID: 57149128202     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2008.2004313     Document Type: Article

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