The effect of end and edge shape on the performance of pseudo-spin valve memories

IEEE Transactions on Magnetics

Volumn 34, Issue 4 PART 1, 1998, Pages 1066-1068

  Gadbois, J ^a,b   Zhu, J G ^a   Vavra, W ^a,b   Hurst, A ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

Edge Domains; GMRAM; Micromagnetics Simulation; MRAM

Indexed keywords

COMPUTER SIMULATION; MAGNETIC DOMAINS; MAGNETIC FILMS; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

EDGE DOMAINS; GIANT MAGNETORESISTANCE RANDOM ACCESS MEMORY (GMRAM); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MICROMAGNETIC SIMULATION;

MAGNETIC FILM STORAGE;

EID: 0032120342     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.706358     Document Type: Article

References (5)

1. A.V. Pohm, J.S.T. Huang, J.M. Daughton, D.R. Krahn, V. Mehra, The Design of a 1Mbit Non-Volatile M-R Memory Chip Using 1.5 × 4 Micron Cells, Fourth Joint MTMM Intermag Conference. Vancouver, July 1988
2. D.D. Tang, P.K. Wang, V.S. Speriosu, S. Lee, K.K. Kung, Spin-Valve RAM Cell, IEEE Trans. Magn., vol. 31, pp. 3206-3208, 1995
3. Y. Zheng and J.-G. Zhu, J. Appl. Phys., vol. 81, p. 5471-5473, 1997
4. J.-G. Zhu and H. N. Bertram, Micromagnetic studies of than metallic films, J. Appl. Phys., vol. 63, no. 8, pp. 3248-3253, 1988
5. J.-G. Zhu, Ph. D. Thesis, Interactive Phenomena in Magnetic Thin Films, University of California, San Diego, 1989