Memories of tomorrow

IEEE Circuits and Devices Magazine

Volumn 18, Issue 5, 2002, Pages 17-27

  Reohr, William ^a,b   Hönigschmid, Heinz ^a,c   Robertazzi, Raphael ^a,b   Gogl, Dietmar ^a,c   Pesavento, Frank ^a,b   Lammers, Stefan ^a,c   Lewis, Kelvin ^a,b   Arndt, Christian ^a,c   Lu, Yu ^a,b   Viehmann, Hans ^a,c   Scheuerlein, Roy ^a,d   Wang, Li Kong ^a,b   Trouilloud, Philip ^a,b   Parkin, Stuart ^a,d   Gallagher, William ^a,b   Müller, Gerhard ^a,c  

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c INFINEON TECHNOLOGIES   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036758682     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2002.1035347     Document Type: Review

References (9)

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3. R. Scheuerlein, W. Gallagher, S. Parkin, A. Lee, S. Ray, R. Robertazzi, and W. Reohr, "A 10nS read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell," ISSCC Dig. Tech. Papers, vol. 43, pp. 128-129, Feb. 2000.
4. S. Tehrani, B. Engel, J.M. Slaughter, E. Chen, M. DeHerrera, M. Durlam, P. Naji, R. Whig, J. Janesky, and J. Calder, "Nonvolatile RAM based on magnetic tunnel junction elements," ISSCC Dig. Tech. Papers, vol. 43, pp. 130-131, Feb. 2000.
5. W. Reohr and R. Scheuerlein, "Interconnection network for connecting memory cells to sense amplifiers," U.S. Patent 6,269,040, 31 July 2001.
6. P. Naji, M. Durlam, S. Tehrani, J. Calder, and M. DeHerrera, "A 256kb 3.0V 1T1MTJ nonvolatile magneto resistive RAM," ISSCC Dig. Tech. Papers, vol. 44, pp. 122-123, Feb. 2001.
7. W. Gallagher and R. Scheuerlein, "Voltage biasing for magnetic RAM with magnetic tunnel memory cells," U.S. Patent 5,991,193, 23 Nov. 1999.
8. F.Z. Wang, "Diode-free magnetic random access memory using spin-dependent tunneling effect," Appl. Phys. Lett., vol. 77, no. 13, pp. 2036-2038, Sept. 2000.
9. S.S.P. Parkin, K.P. Roche, M.G. Samant, P.M. Rice, R.B. Beyers, R.E. Scheuerlein, E.O. Sullivan, S.L. Brown, J. Bucchignano, D.W. Abraham, Y. Lu, M. Rooks, R.L. Trouilloud, R.A. Wanner, and W.J. Gallagher, "Exchange biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory," J. Appl. Phys., vol. 85, p. 5828, 1999.