Characteristics of AP bias in spin valve memory elements

IEEE Transactions on Magnetics

Volumn 34, Issue 4, 1998, Pages 1063-1065

  Zhu, Jian Gang ^a   Zheng, Youfeng ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Spin valve MRAM; Synthetic antiferromagnet

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; FERROMAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETOSTATICS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS;

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); SPIN VALVE MEMORY ELEMENTS;

MAGNETIC FILM STORAGE;

EID: 0032117122     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.706357     Document Type: Article

References (4)

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2. V. Speriosu, B. A. Gurney, D. R. Wilhoit, and L. B. Brown, Spin Valves with Synthetic Ferrimagnets , Intermag'96 Digest, AA-04, 1996.
3. H.A.M. van den Berg, W. Clemens, G. Gieres, G. Rupp, W. Schelter, and M. Vieth, GMR Sensor Scheme with Artificial Antiterromagnetic Subsystem IEEE Trans. Magn., vol. 32, pp.4624-4626, 1996.
4. S.S.P. Parkin, N. More, and K.P. Roche, Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr Phys. Rev. Lett., vol. 64, pp.2304-2307, 1990.