Impact of thin La2O3 insertion for HfO2 MOSFET

ECS Transactions

Volumn 13, Issue 2, 2008, Pages 29-37

  Kakushima, K ^a   Okamoto, K ^a   Adachi, M ^a   Tachi, K ^a   Sato, S ^a   Kawanago, T ^a   Song, J ^a   Ahmet, P ^a   Sugii, N ^a   Tsutsui, K ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE ELECTRON MOBILITIES; FLAT BANDS; INTERFACIAL STATE DENSITIES; MOS FETS; NEGATIVE SHIFTS;

BLOOD VESSEL PROSTHESES; ELECTRON MOBILITY; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; LANTHANUM; MATERIALS; MATERIALS SCIENCE; MOSFET DEVICES; RELIABILITY; SILICON COMPOUNDS;

NANOSYSTEMS;

EID: 55849116007     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2908613     Document Type: Conference Paper

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