An analytic model for nanowire MOSFETs with Ge/Si core/shell structure

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2907-2917

  Zhang, Lining ^a   He, Jin ^a   Zhang, Jian ^a   Liu, Feng ^a   Fu, Yue ^a   Song, Yan ^a   Zhang, Xing ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Analytic model; Ballistic transport; Core shell; Ge Si heterojunction; Nanowire MOSFETs (NWFETs); Poisson Boltzmann equation; Quantum mechanical effect

Indexed keywords

BALLISTICS; BOLTZMANN EQUATION; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DRAIN CURRENT; EXPLOSIVES; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POISSON EQUATION; QUANTUM CHEMISTRY; SEMICONDUCTING GERMANIUM COMPOUNDS; STRUCTURAL DESIGN;

ANALYTIC MODEL; BALLISTIC TRANSPORT; CORE/SHELL; GE/SI HETEROJUNCTION; POISSON-BOLTZMANN EQUATION; QUANTUM-MECHANICAL EFFECT;

COMPUTER SIMULATION;

EID: 56549118780     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2007417     Document Type: Article

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