Analytic carrier-based charge and capacitance model for long-channel undoped surrounding-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1478-1485

  He, Jin ^a   Bian, Wei ^a   Tao, Yadong ^a   Yang, Shengqi ^a   Tang, Xu ^b  

^a PEKING UNIVERSITY   (China)

^b ANALOG DEVICES INC   (United States)

Author keywords

Carrier based approach; Compact model; Device physics; Nonclassical CMOS; Surrounding gate (SRG) MOSFET

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; COMPUTER SIMULATION; DRAIN CURRENT; MATHEMATICAL MODELS;

CARRIER-BASED MODEL; CHANNEL CHARGE-PARTITION SCHEME; CHANNEL CURRENT-CONTINUITY PRINCIPLE;

MOSFET DEVICES;

EID: 34249883957     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.896595     Document Type: Article

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