Physics-based single-piece charge model for strained-Si MOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1555-1562

  Chandrasekaran, Karthik ^a   Zhou, Xing ^a   Chiah, Siau Ben ^a   Shangguan, Wangzuo ^a   See, Guan Huei ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Bulk charge; Charge balance; Compact model; Debye length; Flat band; MOSFET; Potential balance; SiGe; Strained silicon (s Si); Surface potential

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; INTERPOLATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BULK CHARGE; CHARGE BALANCE; COMPACT MODEL; DEBYE LENGTH; FLAT BAND; POTENTIAL BALANCE; STRAINED SILICON; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 23944439718     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850611     Document Type: Article

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