A comparative study of double-gate and surrounding-gate MOSFETs in strong inversion and accumulation using an analytical model

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Volumn , Issue , 2001, Pages 546-549

  Chen, Yijian ^a   Luo, Jianfeng ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of Californias Berkeley   (United States)

Author keywords

Double gate and surrounding gate MOSFET; Strong inversion; Ultrathin body; Volume inversion

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATION; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTOR DOPING;

DOUBLE GATE MOSFETS; STRONMG INVERSION; SURROUNDING GATE MOSFETS; ULTRATHIN BODY; VOLUME INVERSION;

MOSFET DEVICES;

EID: 2442604614     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. F. Balestra, J. Brini and P. Gentil, "Deep depleted SOI MOSFETs with back potential control: a numerical simulation," Solid-State Electronics, Vol. 28, No. 10, pp.1031-1037, 1985.
2. J. P. Colinge et al., "Silicon-on-insulator gate-all-around device," IEDM Technical Digest, pp.595-596, 1990.
3. H. Takato et al., "Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's," IEEE Trans Elec. Devices, pp.573-578, March 1991.
4. C. Wann et al., " A comparative study of advanced MOSFET concepts," IEEE Trans Elec. Devices, Vol. 43, No. 10, pp. 1742-1753, October 1996.
5. X. Huang et al., "Sub 50-nm FinFET: PMOS," IEDM Technical Digest, pp.67-70, 1999.
6. S.-H. Oh et al., "Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs," IEEE Electron Device Lett., vol. 21, No. 9, pp.397-399, September 2000.
7. F. Balestra et al., "Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance," IEEE Electron Device Lett., vol. EDL-8, No. 9, pp.410-412, September 1987.
8. P. Francis et al., "Modeling of ultrathin double-gate nMOS/SOI transistors," IEEE Trans Elec. Devices, Vol. 41, No. 5, pp.715-719, May 1994.
9. J. R. Hauser and M. A. Littlejohn, "Approximation for accumulation and inversion space-charge layers in semiconductors," Solid-State Electronics, Vol. 11, pp.667-674, 1968.
10. Yuan Taur, "An analytical solution to a double-gate MOSFET with undoped body," IEEE Electron Device Lett., vol. 21, No. 5, pp.245-247, May, 2000.
11. P. L. Chambre, "On the solution of the Poisson-Boltzmann equation with application to the theory of thermal explosions," J. Chem. Phys., Vol. 20, No. 11, pp.1795-1797, Nov. 1952.
12. S. Wolf, Silicon Processing, vol. 3-The submicron MOSFET, Sunset Beach: Lattice Press, pp. 106-112.