Nanowire thin-film transistors: A new avenue to high-performance macroelectronics

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3056-3062

  Duan, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Flexible electronics; Large area electronics; Macroelectronics; Nanoribbons; Nanowires (NWs); Thin film transistors (TFTs)

Indexed keywords

ABS RESINS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; CARRIER MOBILITY; CIVIL AVIATION; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; FILMS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POLYMERS; POLYSILICON; POWDERS; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS; SUBSTRATES; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TRANSISTORS;

FLEXIBLE ELECTRONICS; LARGE-AREA ELECTRONICS; MACROELECTRONICS; NANORIBBONS; THIN-FILM TRANSISTORS (TFTS);

THIN FILM TRANSISTORS;

EID: 56549087256     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005182     Document Type: Article

References (52)

1. R. H. Reuss et al., "Macroelectronics: Perspectives on technology and applications," Proc. IEEE, vol. 93, no. 7, pp. 1239-1256, Jul. 2005.
2. M. S. Shur, P. Wilson, and D. Urban, "Electronics on unconventional substrates - Electrotextiles and giant-area flexible circuits," in MRS Proc., 2002, vol. 736, p. D7.15.
3. S. Ucjikoga, "Low-temperature polycrystalline silicon thin-film transistor technologies for system-on-glass displays," MRS Bull., vol. 27, no. 11, pp. 881-886, 2002.
4. R. A. Street, Technology and Applications of Amorphous Silicon. Berlin, Germany: Springer-Verlag, 2000.
5. J. A. Rogers et al., "Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks," Proc. Nat. Acad. Sci. U. S. A., vol. 98, no. 9, pp. 4835-4840, Apr. 2001.
6. F. Garnier, R. Hajlaoui, A. Yassar, and P. Srivastava, "All-polymer field-effect transistor realized by printing techniques," Science vol. 265, no. 5179, pp. 1684-1686, Sep. 1994.
7. B. Crone et al., "Large-scale complementary integrated circuits based on organic transistors," Nature, vol. 403, no. 6769, pp. 521-523, Feb. 2000.
8. C. D. Dimitrakopoulos and D. J. Mascaro, "Organic thin-film transistors: A review of recent advances," IBM J. Res. Develop., vol. 45, pp. 11-27, 2001.
9. B. A. Ridley, B. Nivi, and J. M. Jacobson, "All-inorganic field effect transistors fabricated by printing," Science, vol. 286, no. 5440, pp. 746-749, Oct. 1999.
10. D. V. Talapin and C. B. Murray, "PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors," Science, vol. 310, no. 5745, pp. 86-89, Oct. 2005.
11. C. R. Kagan, D. B. Mitzi, and C. D. Dimitrakopoulos, "Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors," Science, vol. 286, no. 5441, pp. 945-947, Oct. 1999.
12. D. B. Mitzi, K. Chondroudis, and C. R. Kagan, "Organic-inorganic electronics," IBM J. Res. Develop., vol. 45, pp. 29-45, 2001.
13. X. Duan, Y. Huang, Y. Cui, and C. M. Lieber, "Nanowire nanoelectronics assembled from the bottom-up," in Molecular Nanoelectronics, M. A. Reed and T. Lee, Eds. Stevenson Ranch, CA: Amer. Sci. Publishers, 2003, pp. 199-227.
14. X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C. M. Lieber, "InAs/InP radial nanowire heterostructures as high electron mobility devices," Nano Lett., vol. 7, no. 10, pp. 3214-3218, Sep. 2007.
15. S. J. Tans, R. M. Verschueren, and C. Dekker, "Room-temperature transistor based on a single carbon nanotube," Nature, vol. 393, no. 6680, pp. 49-52, May 1998.
16. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, "Single-and multi-wall carbon nanotube field effect transistors," Appl. Phys. Lett., vol. 73, no. 17, pp. 2447-2449, Oct. 1998.
17. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Lett., vol. 2, no. 8, pp. 869-872, Jul. 2002.
18. X. Duan, Y. Huang, J.Wang, Y. Cui, and C.M. Lieber, "Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices," Nature, vol. 409, no. 6816, pp. 66-69, Jan. 2001.
19. Y. Huang, X. Duan, Q. Wei, and C.M. Lieber, "Directed assembly of one-dimensional nanostructures into functional networks," Science vol. 291, no. 5504, pp. 630-633, Jan. 2001.
20. A. Tao et al., "Langmuir-Blodgett silver nanowire monolayers for molecular sensing using surface-enhanced raman spectroscopy," Nano Lett., vol. 3, no. 9, pp. 1229-1233, Aug. 2003.
21. D. Whang, S. Jin, Y. Wu, and C. M. Lieber, "Large-scale hierarchical organization of nanowire arrays for integrated nanosystems," Nano Lett., vol. 3, no. 9, pp. 1255-1259, Aug. 2003.
22. X. Duan et al., "High-performance thin-film transistors using semiconductor nanowires and nanoribbons," Nature, vol. 425, no. 6955, pp. 274-278, Sep. 2003.
23. S. Jin, D. Whang, M. C. McAlpine, R. S. Friedman, Y. Wu, and C. M. Lieber, "Scalable interconnection and integration of nanowire devices without registration," Nano Lett., vol. 4, no. 5, pp. 915-919, Apr. 2004.
24. E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers, "A printable form of silicon for high performance thin film transistors on plastic substrates," Appl. Phys. Lett., vol. 84, no. 26, pp. 5398-5400, Jun. 2004.
25. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
26. T. Mizuno, N. Sugiyama, A. Kurobe, and S. Takagi, "Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology," IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1612-1618, Aug. 2001.
27. A. Hara et al., "High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes, vol. 43, no. 4A, pp. 1269-1276, 2004.
28. X. Duan, "Assembled semiconductor nanowire thin films for high-performance flexible macroelectronics," MRS Bull., vol. 32, no. 2, pp. 134-141, 2007.
29. J. S. Becker, S. Suh, and R. G. Gordon, "Highly conformal thin films of tungsten nitride prepared by atomic layer deposition from a novel precursor," Chem. Mater., vol. 15, no. 15, pp. 2969-2976, Jun. 2003.
30. Z. Pan, Z. Dai, and Z.-L. Wang, "Nanobelts of semiconducting oxides," Science, vol. 291, no. 5510, pp. 1947-1949, Mar. 2001.
31. X. Duan and C. M. Lieber, "General synthesis of compound semiconductor nanowires," Adv. Mater., vol. 12, no. 4, pp. 298-302, Feb. 2000.
32. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, "Gallium nitride nanowire nanodevices," Nano Lett., vol. 2, no. 2, pp. 101-104, Jan. 2002.
33. X. Duan, Y. Huang, R. Argarawal, and C. M. Lieber, "Single-nanowire electrically driven lasers," Nature, vol. 421, no. 6920, pp. 241-245, Jan. 2003.
34. P. K. Weimer, "The TFT a new thin-film transistor," Proc. IEEE, vol. 50, no. 6, pp. 1462-1465, Jun. 1962.
35. H. Sakaki, "Quantum wires, quantum boxes and related structures: Physics, device potentials and structural requirements," Surf. Sci. vol. 267, no. 1-3, pp. 623-629, 1992.
36. L. J. Lauhon, M. S. Gudiksen, D.Wang, and C.M. Lieber, "Epitaxial coreshell and core-multishell nanowire heterostructures," Nature, vol. 420, no. 6911, pp. 57-61, Nov. 2002.
37. W. Lu, J. Xiang, B. P. Timko, Y. Wu, and C. M. Lieber, "One-dimensional hole gas in germanium/silicon nanowire heterostructures," Proc. Nat. Acad. Sci. U. S. A., vol. 102, no. 29, pp. 10 046-10 051, Jul. 2005.
38. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, "Ge/Si nanowire heterostructures as high-performance field-effect transistors," Nature, vol. 441, no. 7092, pp. 489-493, May 2006.
39. Y. Li et al., "Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors," Nano Lett. vol. 6, no. 7, pp. 1468-1473, Jun. 2006.
40. Y. Huang, X. Duan, and C. M. Lieber, "Nanowires for integrated multicolor nanophotonics," Small, vol. 1, no. 1, pp. 142-147, Jan. 2005.
41. Y. Huang and C. M. Lieber, "Integrated nanoscale electronics and opto-electronics: Exploring nanoscale science and technology through semiconductor nanowires," Pure Appl. Chem., vol. 76, no. 12, pp. 2051-2068, 2004.
42. F. Qian, S. Gradecak, Y. Li, C. Wen, and C. M. Lieber, "Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes," Nano Lett., vol. 5, no. 11, pp. 2287-2291, Sep. 2005.
43. E. S. Snow, P. M. Campbell, M. G. Ancona, and J. P. Novak, "Highmobility carbon-nanotube thin-film transistors on a polymeric substrate," Appl. Phys. Lett., vol. 86, no. 3, p. 033 105, Jan. 2005.
44. M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. U. Wang, and C. M. Lieber, "High-performance nanowire electronics and photonics on glass and plastic substrates," Nano Lett., vol. 3, no. 11, pp. 1531-1535, Oct. 2003.
45. Y. Sun et al., "Gigahertz operation in flexible transistors on plastic substrates," Appl. Phys. Lett., vol. 88, no. 18, p. 183 509, May 2006.
46. R. S. Friedman, M. C. McAlpine, D. S. Ricketts, D. Ham, and C. M. Lieber, "High-speed integrated nanowire circuits," Nature, vol. 434, p. 1085, Apr. 2005.
47. W. Clemens, W. Fix, J. Ficker, A. Knoblock, and A. Ullmann, "From polymer transistors toward printed electronics," J. Mater. Res., vol. 19, no. 7, pp. 1963-1973, Jul. 2004.
48. K. Hiranaka, T. Yamaguchi, and S. Yanagisawa, "Self-alignment processed amorphous silicon ring oscillators," IEEE Electron Device Lett., vol. EDL-5, no. 7, pp. 224-225, Jul. 1984.
49. Y. Mishima, K. Yoskino, F. Takeuchi, K. Ohgata, M. Takei, and N. Sasaki, "High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates," IEEE Electron Device Lett., vol. 22, no. 2, pp. 89-91, Feb. 2001.
50. A. Javey, S. Nam, R. S. Friedman, H. Yan, and C. M. Lieber, "Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics," Nano Lett., vol. 7, no. 3, pp. 773-777, Feb. 2007.
51. S. Mack, M. Meitl, A. Baca, Z.-T. Zhu, and J. A. Rogers, "Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers," Appl. Phys. Lett., vol. 88, no. 21, p. 213 101, May 2006.
52. Y. Sun, D.-Y. Khang, K. Hurley, R. G. Nuzzo, and J. A. Rogers, "Photolithographic route to the fabrication of micro/nanowires of III-V semiconductors," Adv. Funct. Mater., vol. 15, no. 1, pp. 30-40, Jan. 2005.