High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1269-1276

  Hara, Akito ^a   Takei, Michiko ^a   Takeuchi, Fumiyo ^a   Suga, Katsuyuki ^a   Yoshino, Kenichi ^a   Chida, Mitsuru ^a   Kakehi, Tatsuya ^a   Ebiko, Yoshiki ^a   Sano, Yasuyuki ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Crystallization; Glass; Laser; Polycrystalline; Silicon; Thin film transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTINUOUS WAVE LASERS; CRYSTALLIZATION; GLASS; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SCANNING; SOLIDIFICATION; SUBSTRATES;

(CLC); CONTINUOUS WAVE (CW); CONTINUOUS WAVE LASER LATERAL CRYSTALLIZATION; METAL OXIDE SEMICONDUCTORS (MOS); NON-ALKALINE GLASS;

THIN FILM TRANSISTORS;

EID: 3042792350     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1269     Document Type: Article

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