Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1345-1347

  Shimizu, Yasuo ^a   Takano, Akio ^b   Itoh, Kohei M ^a  

^a KEIO UNIVERSITY   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

Author keywords

Isotopes; Shallow junction; Silicon; SIMS; Superlattices

Indexed keywords

ARSENIC; DEPTH PROFILING; ION IMPLANTATION; IONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SUPERLATTICES;

ALTERNATING LAYERS; ARSENIC IONS; DEPTH SCALE; DOPANT CONCENTRATIONS; SHALLOW JUNCTION; SILICON ISOTOPES; STANDARD SAMPLES; SUPER-LATTICE STRUCTURES;

ISOTOPES;

EID: 56449091806     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.016     Document Type: Article

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