Accurate depth profiling for ultra-shallow implants using backside-SIMS

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 673-677

  Hongo, Chie ^a   Tomita, Mitsuhiro ^a   Takenaka, Miyuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic mixing effect; Backside SIMS; SIMS response function; Surface transient; Ultra shallow doping

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); ION IMPLANTATION; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

ATOMIC MIXING EFFECTS; BACKSIDE SECONDARY ION MASS SPECTROMETRY (SIMS); SECONDARY ION MASS SPECTROMETRY (SIMS) RESPONSE FUNCTION; SURFACE TRANSIENTS; ULTRA-SHALLOW DOPING;

SURFACE CHEMISTRY;

EID: 2942616697     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.236     Document Type: Conference Paper

References (8)

1. Dowsett M.G., Chu D.P. J. Vac. Sci. Technol. B. 16:1998;377.
2. Hofmann S. Surf. Interf. Anal. 27:1999;825-834.
3. Tomita M., Suzuki M., Tachibe T., Kozuka S., Murakoshi A. Appl. Surf. Sci. 203-204:2003;377.
4. Magee C.W., Mount G.R., Smith S.P., Herner B., Gossmann H.-J. J. Vac. Sci. Technol. B. 16:1998;3099.
5. Ormsby T.J., Chu D.P., Dowsett M.G., Cooke G.A., Patel S.B. Appl. Surf. Sci. 144-145:1999;292.
6. Wittmaack K. Philos. Trans. Roy. Soc. Lond. A. 354:1996;2731.
7. M.G. Dowsett, D.P. Chu, in: Proceedings of the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI), Wiley, Chichester, 1998, p. 343.
8. Chu D.P., Dowsett M.G. Phys. Rev. B. 56:1997;15167.