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Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices

(6) Shimizu, Yasuo a Uematsu, Masashi a Itoh, Kohei M a Takano, Akio b Sawano, Kentarou c Shiraki, Yasuhiro c

a KEIO UNIVERSITY (Japan)

b NTT Advanced Technology Corporation (Japan)

c TOKYO CITY UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ISOTOPES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

ARSENIC IMPLANTATIONS; ATOMIC DISPLACEMENTS; AVERAGE DISTANCES; CONVOLUTION INTEGRALS; DEPTH PROFILES; QUANTITATIVE EVALUATIONS; SILICON ISOTOPES; SIMULATION BASED; TRANSMISSION ELECTRONS;

NONMETALS;

EID: 57049166034 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.021401 Document Type: Article

Times cited : (19)

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