Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 377-382

  Tomita, Mitsuhiro ^a   Suzuki, M ^a   Tachibe, T ^a   Kozuka, S ^a   Murakoshi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Chemical analysis; Implant dose; Junction depth; NRA; SIMS; Ultra shallow dopant

Indexed keywords

ARSENIC; DOPING (ADDITIVES); IONS; SECONDARY ION MASS SPECTROMETRY;

ULTRA-SHALLOW IMPLANTS;

BORON;

EID: 12244271431     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00679-7     Document Type: Conference Paper

References (8)

1. Schueler B.W., Reich D.F. J. Vac. Sci. Technol. B. 18:1999;496.
2. M.G. Dowsett, J. Bellingham, S. Al-Harti, B. Guzman, T.J. Ormsby, G.A. Cooke, C. McConville, in: Proceedings of the Second International Symposium on SIMS and Related Techniques, Seikei University, Japan, 2000.
3. M. Tomita, C. Hongo, A. Murakoshi, in: Proceedings of the Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 489.
4. J. Bennett, A. Diebold, in: Proceedings of the Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 541.
5. Magee C.W., Mount G.R., Smith S.P., Herner B., Gossmann H.-J. J. Vac. Sci. Technol. B. 16:1998;3099.
6. Dowsett M.G., Barlow R.D., Allen P.N. J. Vac. Sci. Technol. B. 12:1994;186.
7. Suzuki M., Tomita M., Murakoshi A. Nucl. Instr. Meth. B. 190:2002;552.
8. T. Tachibe, M. Tomita, M. Yabuki, M. Takenaka, S. Kozuka, Abstracts of the 62th Symposium on Analytical Chemistry, Matsumoto, Japan, 2001, p. 202 (in Japanese).