Depth scale distortions in shallow implant secondary ion mass spectrometry profiles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 496-500

  Schueler, B W ^a   Reich, D F ^a  

^a Physical Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ION BEAMS; ION BOMBARDMENT; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE ROUGHNESS;

DEPTH SCALE DISTORTIONS;

ION IMPLANTATION;

EID: 0033698992     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591219     Document Type: Article

References (5)

1. C. W. Magee, D. Jacobson, and H. J. Gossmann, J. Vac. Sci. Technol. B, these proceedings.
2. Z. X. Jiang and P. F. A. Alkemade, Appl. Phys. Lett. 30, 315 (1998).
3. G. R. Mount, S. P. Smith, C. H. Hitzman, V. K. F. Chia, and C. W. Magee, AIP Conf. Proc. 449, 757 (1998).
4. C. W. Magee, G. R. Mount, S. P. Smith, B. Herner, and H. J. Gossmann, Proceedings of the IIT'98 Conference, Kyoto, Japan, 1998.
5. SIMION 3D - Ion optics simulation program, D. H. Dahl, 1996.