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Volumn 508, Issue 1-2, 2006, Pages 160-162
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Growth and characterization of short-period silicon isotope superlattices
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Author keywords
Molecular beam epitaxy; Raman scattering; Silicon; Superlattices
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Indexed keywords
ISOTOPES;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
RAMAN SPECTROSCOPY;
SILICON;
ATOMIC MONOLAYER;
BOND-CHARGE;
RAMAN SHIFT;
SILICON ISOTOPE SUPERLATTICES;
SUPERLATTICES;
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EID: 33646078335
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.08.394 Document Type: Article |
Times cited : (23)
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References (10)
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