Ultra-shallow depth profiling with secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 317-322

  Tomita, M ^a   Hongo, C ^a   Suzuki, M ^a   Takenaka, M ^a   Murakoshi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CONVOLUTION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SILICON WAFERS; SPUTTERING; SUBSTRATES; SURFACE PHENOMENA;

DEPTH RESOLUTION; ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 1642306057     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1622672     Document Type: Conference Paper

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