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Volumn 44, Issue 4 B, 2005, Pages 2433-2436

Accuracy of secondary ion mass spectrometry depth profiling for sub-keV As+ implantation

Author keywords

Arsenic; Ion implantation; Low energy; Secondary ion mass spectrometry; SIMS; Sub keV

Indexed keywords

APPROXIMATION THEORY; ARSENIC; COMPUTER SIMULATION; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

BINARY COLLISION APPROXIMATION (BCA); DEPTH PROFILING; LOW ENERGY; SUB-KEV;

ION IMPLANTATION;

EID: 21244463472 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2433 Document Type: Conference Paper

Times cited : (4)

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