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Volumn 401-402, Issue , 2007, Pages 511-518
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Defect studies for the development of nano-scale silicon diffusion simulators
a
KEIO UNIVERSITY
(Japan)
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Author keywords
Defects; Diffusion; Interface; Nano process; Silicon; Silicon oxide; Simulation
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Indexed keywords
DIFFUSION IN SOLIDS;
HETEROJUNCTIONS;
IMPURITIES;
SEMICONDUCTOR DEVICES;
DEFECT INTERACTIONS;
EXTRINSIC DEFECTS;
NANO-SCALE DEVICE;
SILICON COMPOUNDS;
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EID: 36048988448
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2007.09.011 Document Type: Article |
Times cited : (3)
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References (29)
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