The response of silicon detectors to low-energy ion implantation

Journal of Physics Condensed Matter

Volumn 20, Issue 41, 2008, Pages

  Hopf, T ^a   Yang, C ^a   Andresen, S E ^b   Jamieson, D N ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYSIS; ION BOMBARDMENT; ION IMPLANTATION; IONIZATION; IONS; SILICON; SILICON DETECTORS;

CHARGE COLLECTION EFFICIENCIES; CRYSTAL SILICONS; CURRENT MODELS; DAMAGE ACCUMULATIONS; ELECTRICAL TRANSIENTS; INDIVIDUAL IONS; IONIZATION MEASUREMENTS; LOW ENERGIES; STOPPING AND RANGE OF IONS IN MATTERS;

AMORPHOUS SILICON;

EID: 56349101572     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/41/415205     Document Type: Article

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