Response of 100% internal carrier collection efficiency silicon photodiodes to low-energy ions

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1785-1789

  Funsten, Herbert O ^a,b   Ritzau, Stephen M ^b,c   Harper, Ronnie W ^b   Korde, Raj ^a,d  

^a IEEE   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c ON SEMICONDUCTOR   (United States)

^d International Radiation Detectors   (United States)

Author keywords

Electronic energy loss; Ion radiation; Ionizing radiation; Nuclear energy loss; Photodiodes; Radiation effects; Silicon detectors

Indexed keywords

INTERNAL CARRIER COLLECTION EFFICIENCIES; LOW-ENERGY IONS;

DEPOSITION; ELECTRIC CHARGE; IONIZING RADIATION; MONTE CARLO METHODS; PHOTODETECTORS; POSITIVE IONS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; ULTRATHIN FILMS;

PHOTODIODES;

EID: 0035721954     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983131     Document Type: Conference Paper

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