Range of ion-implanted rare earth elements in Si and SiO2

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 83-85

  Palmetshofer, L ^a   Gritsch, M ^b   Hobler, G ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Ion implantation; Range distribution; Rear earth elements; Silicon

Indexed keywords

COMPUTER SIMULATION; ERBIUM; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICA; YTTERBIUM;

ELECTRONIC STOPPING POWER;

ION IMPLANTATION;

EID: 0035942371     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00742-X     Document Type: Article

References (8)

1. Ion implantation physics