Molecular dynamics simulations of ion implantation for the fabrication of a solid-state quantum computer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 1-2, 2004, Pages 99-108

  Wilson, H F ^a   Marks, N A ^a   McKenzie, D R ^a   Lee, K H ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Ion implantation; Molecular dynamics; Phosphorus on silicon; Quantum computing

Indexed keywords

ANNEALING; ARRAYS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; COMPUTER SYSTEMS; CRYSTALLIZATION; CRYSTALS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ION IMPLANTATION; LITHOGRAPHY; PHOSPHORUS; QUANTUM THEORY;

MIGRATION ENERGIES; QUANTUM COMPUTING;

MOLECULAR DYNAMICS;

EID: 0346394048     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.06.001     Document Type: Article

References (22)

1. Shor P.W. SIAM J. Comput. 26:1997;1474.
2. Vanderspan L.M.K., Steffen M., Bretya G., Yannoni C.S., Sherwood M.H., Chuang I.L. Nature. 414:2001;883.
3. Bennett C.H., Divincenzo D.P. Nature. 404:2000;247.
4. Kane B.E. Nature. 393:1998;133.
5. Jamieson D.N., Prawer S., Andrienko I., Brett D.A., Millar V. Nucl. Instr. and Meth. B. 175-177:2001;744.
6. O'Brien J.L., et al. Phys. Rev. B. 64:2001;161401.
7. Robinson M.T., Torrens I.M. Phys. Rev. B. 63:1974.
8. Beardmore K.M., Grönbech-Jensen N. Nucl. Instr. and Meth. B. 153:1999;391.
9. Bazant M.Z., Kaxiras E., Justo J.F. Phys. Rev. B. 56:1997;8542.
10. Tersoff J. Phys. Rev. B. 38:1988;9902.
11. Stillinger F.H., Weber T.A. Phys. Rev. B. 31:1985;5626.
12. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Matter, Vol. 1, Pergamon, New York, 1985.
13. Lindhard J., Scharff M., Schiott H.E. Mat. Fys. Medd. Dan.Vid. Selsk. 33:1963;14.
14. Tang M., Colombo L., Zhu J., Diaz de la Rubia T. Phys. Rev. B. 55:1997;14279.
15. Blochl P.E., Smargiassi E., Car R., Laks D.B., Andreoni W., Pantelides S.T. Phys. Rev. Lett. 70:1995;2435.
16. Song E.G., Kim E., Lee Y.H., Hwang Y.G. Phys. Rev. B. 48:1993;1486.
17. Gilmer G.H., Diaz de la Rubia T., Stock D.M., Jaraiz M. Nucl. Instr. and Meth. B. 102:1995;247.
18. G.D. Watkins, in: F.A. Huntley (Ed.), Lattice Defects in Semiconductors, 1974. Institute of Physics Conference Series No. 23, Institute of Physics, London, 1975, p. 1.
19. Wijaranakula W. J. Electrochem. Soc. 139:1992;604.
20. Zawadzki M.T., Luo W., Clancy P. Phys. Rev. B. 63:2000;205205.
21. Förster A., Layet J.M., Lüth H. Appl. Surf. Sci. 41:1989;306.
22. Ranieri V., Privitera V., Galvagno G., Priolo F., Rimini E. Mater. Chem. Phys. 38:1994;105.