Estimation of spatial extent of a defect cluster in Si induced by single ion irradiation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Koyama, Masato ^a   Cheong, Chon wa ^a   Yokoyama, Koji ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ION BOMBARDMENT; POINT DEFECTS; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES;

DEFECT CLUSTERS;

SILICON WAFERS;

EID: 0031166596     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l708     Document Type: Article

References (12)