Damage induced in 100% internal carrier collection efficiency silicon photodiodes by 10-60 kev ion irradiation

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2820-2825

  Ritzau, S M ^a   Funsten, H O ^a   Harper, R W ^a   Korde, R ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRON TRANSITIONS; HELIUM; HYDROGEN; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; NEON; NITROGEN; RADIATION DAMAGE; SILICA; SILICON SENSORS;

INTERNAL CARRIER COLLECTION EFFICIENCY; NUCLEAR STOPPING POWER; SILICON PHOTODIODES;

PHOTODIODES;

EID: 0032313954     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736534     Document Type: Article

References (7)

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2. H.O. Funsten, D. M. Suszcynsky, S. M. Ritzau, and R. Korde, "Response of 100% Internal quantum Efficiency Silicon Photodiodes to 200 eV to 40 keV Electrons," IEEE Trans, on Nuc. Sei. , vol. 44, pp. 2561-2565,1997.
3. T. Diaz de la Rubia and G.H. Gilmer, "Structural transformations and defect production in ion implanted silicon: A molecular dynamics simulation study," Phys. Rev. Lett. , vol. 74, pp. 2507-2510,1995.
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