Stopping power for MeV energy Au ions in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 128-131

  Yongjun, Zhai ^a   Xiting, Lu ^a   Tao, Zheng ^a   Zonghuang, Xia ^a   Dingyu, Shen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Au ion; MeV implantation; Rutherford backscattering technique; Si target; Stopping power

Indexed keywords

GOLD; HIGH ENERGY PHYSICS; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TARGETS;

BIERSACK GENERAL POTENTIAL METHOD; ELECTRONIC STOPPING POWER; NUCLEAR STOPPING POWER;

ION IMPLANTATION;

EID: 0032472637     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00586-7     Document Type: Article

References (5)

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3. Tang Jiayong, Zhang Zhuhua, Stopping Power, Range and Channeling Effects of Ions Implanted in Solids, Atomic Energy Press, Beijing, 1988, p. 201.
4. J. Lindhard, M. Scharff, H.E. Schiott, Mat. Fys. Medd. Danske Vid. Selsk. 33 (14) (1963) 26.
5. J.F. Ziegler, J.P. Biersack, U. Littmark, The Program Package TRIM-91.