Chapter 8 Magnetic Impurities in Wide Band-gap III-V Semiconductors

Semiconductors and Semimetals

Volumn 82, Issue , 2008, Pages 325-369

  Wolos, Agnieszka ^a   Kaminska, Maria ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CHROMIUM; COMPOSITE STRUCTURES; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; EXCHANGE INTERACTIONS; EXCITED STATES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ARSENIDE; GALLIUM NITRIDE; GALLIUM PHOSPHIDE; GROUND STATE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; IRON; IRON COMPOUNDS; LIGHT ABSORPTION; MANGANESE COMPOUNDS; METAL IONS; NANOCRYSTALLINE MATERIALS; PARAMAGNETISM; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SPINODAL DECOMPOSITION; VALENCE BANDS; WAVE FUNCTIONS;

CHARGE TRANSFER TRANSITIONS; DOUBLE EXCHANGE MECHANISM; ELECTRON TRANSPORT MEASUREMENTS; FERROMAGNETIC SEMICONDUCTOR; FERROMAGNETISM IN SEMICONDUCTORS; LOCALIZED WAVE FUNCTIONS; MAGNETIZATION MEASUREMENTS; TRANSITION METAL DOPANTS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 56349097712     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)00008-2     Document Type: Review

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