Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 539-545

  Yakunin, A M ^a   Silov, A Yu ^a   Koenraad, P M ^a   Van Roy, W ^b   De Boeck, J ^b   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b IMEC   (Belgium)

Author keywords

Acceptor; GaAs; Magnetic semiconductors; Manganese; Spintronics

Indexed keywords

ANISOTROPY; CRYSTALS; DEFECTS; ELECTRIC POTENTIAL; ELECTRON RESONANCE; FERMI LEVEL; HEAT CONDUCTION; IMAGE SENSORS; MANGANESE; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

MAGNETIC DOPANTS; SPINTRONICS; VALANCE HOLE;

MAGNETIC SEMICONDUCTORS;

EID: 3242710605     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.055     Document Type: Conference Paper

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