Manganese as a fast charge carrier trapping center in InP

Physica B: Condensed Matter

Volumn 382, Issue 1-2, 2006, Pages 220-228

  Korona, K P ^a   Wysmolek, A ^a   Kaminska M ^a   Twardowski, A ^a   Piersa, M ^b   Palczewska, M ^b   Strzelecka, G ^b   Hruban, A ^b   Kuhl, J ^c   Adomavicius, R ^d   Krotkus, A ^d  

^a UNIVERSITY OF WARSAW   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

Dynamics; Hopping; InP; Manganese

Indexed keywords

CHARGE CARRIERS; DYNAMICS; ELECTRIC CONDUCTIVITY; ELECTRIC EXCITERS; ELECTRON TRAPS; MANGANESE; TEMPERATURE DISTRIBUTION;

HOLES TRAPPING; HOPPING; NONRADIATIVE RECOMBINATIONS; SUBPICOSECOND; WAVEFUNCTIONS;

INDIUM COMPOUNDS;

EID: 33746875946     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.02.035     Document Type: Article

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