Formation of Mn-related defect band in InP

Acta Physica Polonica A

Volumn 103, Issue 6, 2003, Pages 637-642

  Macieja, B ^a   Korona, K P ^a   Piersa, M ^b   Witowski, A M ^a   Wasik, D ^a   Wysmolek A ^a   Strzelecka, G ^b   Hruban, A ^b   Surma, B ^b   Palczewska, M ^b   Kaminska M ^a   Twardowski, A ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON TRANSPORT PROPERTIES; LIGHT ABSORPTION; PARAMAGNETIC RESONANCE; PHOTOIONIZATION; PHOTOLUMINESCENCE;

OPTICAL BAND GAPS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0043156272     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.103.637     Document Type: Conference Paper

References (5)

1. K.W. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neumann, N.R.S. Parley, B.L. Gallagher, C.T. Foxon, Appl. Phys. Lett. 81, 4991 (2002).
2. Yan Dawei, B.C. Cavenett, M.S. Skolnick, J. Phys. C. Solid State Phys. 16, L647 (1983).
3. B. Lambert, B. Clerjaud, C. Naud, B. Deveaud, G. Picoli, Y. Toudic, in: Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado (USA), Eds. L.C. Kimerling, J.M. Parsey, Jr., Metallurgical Society of AIME, New York 1985, p. 1141.
4. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984.
5. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 17a, Ed. O. Madelung, Springer Verlag, Berlin 1982, p. 281.