Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2860-2862

  Mahadevan, Priya ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ENERGIES; ANTIBONDING STATES; PARTIAL DENSITY; SPINTRONICS;

CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; FERROMAGNETISM; FUNCTIONS; IMPURITIES; LIGHT EMISSION; MATHEMATICAL MODELS; NEGATIVE IONS; POLARIZATION; STABILITY;

GALLIUM COMPOUNDS;

EID: 8344258118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1799245     Document Type: Article

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