Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance

Solid State Communications

Volumn 101, Issue 8, 1997, Pages 611-615

  Baranov, P G ^a   Ilyin, I V ^a   Mokhov, E N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A. semiconductors; C. point defects; E. electron paramagnetic resonance

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; IRON; MAGNETIC ANISOTROPY; PARAMAGNETIC RESONANCE; POINT DEFECTS; SUBLIMATION;

CHARGE STATES; ELECTRON CONFIGURATION; SUBLIMATION SANDWICH METHOD; TRACE IMPURITIES; ZERO PHONON LINE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031078943     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00667-9     Document Type: Article

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