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Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

Nanoscale charge transport measurements using a double-tip scanning tunneling microscope

(5) Jaschinsky, Philipp a,b Wensorra, Jakob a Lepsa, Mihail Ion a Mysliveček, Josef a,c Voigtländer, Bert a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b Fraunhofer Center Nanoelectronic Technologies (Germany)

c CHARLES UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUBE DIODES; MICROSCOPES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; RESONANT TUNNELING; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; TUNNEL DIODES;

CHARGE TRANSPORTS; CONDUCTIVE SURFACES; ELECTRIC PROBES; ELECTRICAL CONTACTS; ELECTRICAL MEASUREMENTS; HIGH STABILITIES; LATERAL TRANSPORTS; NANOSCALE; NANOSIZED; NON CONTACTS; NONDESTRUCTIVE; RESONANT TUNNELING DIODES; SCANNING ELECTRON MICROSCOPES; SI(111); SURFACE NANOSTRUCTURES; TUNNELING GAPS; TUNNELING MICROSCOPES; VERTICAL TRANSPORTS;

TUNNELING (EXCAVATION);

EID: 56349092984 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3006891 Document Type: Article

Times cited : (27)

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