Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Lin, X ^a   He, X B ^a   Yang, T Z ^a   Guo, W ^a   Shi, D X ^a   Gao, H J ^a   Ma, D D D ^b   Lee, S T ^b   Liu, F ^c   Xie, X C ^d  

^a INSTITUTE OF PHYSICS   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF UTAH   (United States)

^d OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE TRANSITION; CURRENT-VOLTAGE PROPERTIES; SURFACE REGION; ZNO NANOWIRE;

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

EID: 33746623397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234293     Document Type: Article

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