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Volumn 73, Issue 9, 1998, Pages 1218-1220

A highly transmittive semiconductor base for ballistic electron emission microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001606202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122132     Document Type: Article
Times cited : (13)

References (18)
  • 9
    • 21544454826 scopus 로고    scopus 로고
    • oisson solver by Greg Snider, Dept. of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556; electronic mail: snider.7@nd.edu
    • Poisson solver by Greg Snider, Dept. of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556; electronic mail: snider.7@nd.edu
  • 11
    • 33744685518 scopus 로고
    • The InAs effective masses were obtained through a nonlocal pseudopotential calculation carried out by. P. Vogl, Walter Schottky Institute, Munich. [original code by
    • The InAs effective masses were obtained through a nonlocal pseudopotential calculation carried out by. P. Vogl, Walter Schottky Institute, Munich. [original code by J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976)].
    • (1976) Phys. Rev. B , vol.14 , pp. 556
    • Chelikowsky, J.R.1    Cohen, M.L.2
  • 12
    • 0003219297 scopus 로고
    • Numerical Data and Functional Relationships in Science and Technology
    • All other data were taken from Landolt Börnstein New Series Springer, New York
    • All other data were taken from Landolt Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17: Physics of Group IV Elements and III-V compounds (Springer, New York, 1982).
    • (1982) Vol. 17: Physics of Group IV Elements and III-V Compounds , vol.17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.