Measurement of surface state conductance using STM point contacts

Surface Science

Volumn 357-358, Issue , 1996, Pages 32-37

  Hasegawa, Yukio ^a   Lyo, In Whan ^b   Avouris, Phaedon ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electrical transport; Electrical transport measurements; Low index single crystal surfaces; Metallic surfaces; Scanning tunneling microscopy; Silicon

Indexed keywords

ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); POINT CONTACTS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; SINGLE CRYSTALS; SURFACE PROPERTIES; SURFACE STRUCTURE; TRANSPORT PROPERTIES;

ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MEASUREMENTS; LOW INDEX SINGLE CRYSTAL SURFACES; METALLIC SURFACES; SPACE CHARGE LAYER FORMATION; SURFACE CONDUCTANCE;

SURFACES;

EID: 0030169532     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00052-0     Document Type: Article

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