Electron conduction through surface states of the Si(111)-(7×7) surface

Physical Review Letters

Volumn 81, Issue 4, 1998, Pages 890-893

  Heike, Seiji ^a,b   Watanabe, S ^c   Wada, Y ^a,b   Hashizume, T ^a  

^a HITACHI LTD   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000530291     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.890     Document Type: Article

References (23)

1. M. Henzler, Surface Physics of Materials (Academic Press, New York, 1975).
2. D. E. Aspnes, and P. Handler, Surf. Sci., 4, 353 (1966).
3. B. N. J. Persson, Phys. Rev. B, 34, 5916 (1986).
4. G. Binnig, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett., 49, 57 (1982).
5. Y. Hasegawa, and Ph. Avouris, Phys. Rev. Lett., 71, 1071 (1993).
6. D. M. Eigler, and E. K. Schweizer, Nature (London), 344, 524 (1990).
7. Y. Hasegawa, I. W. Lyo, and Ph. Avouris, Appl. Surf. Sci., 76/77, 347 (1994).
8. S. Heike, et al., Jpn. J. Appl. Phys., 35, L1367 (1996).
9. R. Guckenberger, et al., Science, 266, 1538 (1994).
10. J. Bardeen, Phys. Rev., 71, 717 (1947).
11. T. Komeda, R. Hasunuma, H. Mukaida, and H. Tokumoto, Appl. Phys. Lett., 68, 3482 (1996).
12. K. Takayanagi, et al., J. Vac. Sci. Technol. A, 3, 1502 (1985).
13. R. Wolkow, and Ph. Avouris, Phys. Rev. Lett., 60, 1049 (1988).
14. H. A. Bethe, MIT Radiation Laboratory Report No. 43-12, 1942.
15. W. J. Kaiser, and L. D. Bell, Phys. Rev. Lett., 60, 1406 (1988).
16. K. Kobayashi, Phys. Rev. B, 57, 12456 (1998).
17. S. Heike, et al. (unpublished).
18. B. N. J. Persson, and J. E. Demuth, Phys. Rev. B, 30, 5968 (1984).
19. J. A. Stroscio, and W. Ho, Phys. Rev. Lett., 54, 1573 (1985).
20. S. Hasegawa, and S. Ino, Phys. Rev. Lett., 68, 1192 (1992).
21. J. E. Demuth, B. N. J. Persson, and A. J. Schell-Sorokin, Phys. Rev. Lett., 51, 2214 (1983).
22. H. Lim, et al., Phys. Rev. B, 52, 17231 (1995).
23. N. Kobayashi, K. Hirose, and M. Tsukada, Jpn. J. Appl. Phys., 35, 3710 (1996).