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Volumn 245, Issue 7, 2008, Pages 1337-1355

Optical properties of as-grown and process-induced stacking faults in 4H-SiC

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EID: 55649120728     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200844055     Document Type: Review
Times cited : (16)

References (62)
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    • 18844459488 scopus 로고    scopus 로고
    • See also:, edited by W. J. Choyke, H. Matsunami, and G. Pensl Springer-Verlag, Berlin, ISBN 3-540-40458-9
    • See also: U. Lindefelt and H. Iwata, in: Silicon carbide: Recent major advances, edited by W. J. Choyke, H. Matsunami, and G. Pensl (Springer-Verlag, Berlin, 2004), p. 89, ISBN 3-540-40458-9.
    • (2004) Silicon carbide: Recent major advances , pp. 89
    • Lindefelt, U.1    Iwata, H.2
  • 12
    • 55649114128 scopus 로고    scopus 로고
    • For a recent review on SiC device developments, see: Silicon carbide: Recent major advances, edited by W. J. Choyke, H. Matsunami, and G. Pensl (Springer-Verlag, Berlin, 2004), Part VI: Devices, p. 637, ISBN 3-540-40458-9.
    • For a recent review on SiC device developments, see: Silicon carbide: Recent major advances, edited by W. J. Choyke, H. Matsunami, and G. Pensl (Springer-Verlag, Berlin, 2004), Part VI: Devices, p. 637, ISBN 3-540-40458-9.
  • 16
    • 0000486596 scopus 로고
    • Phys. Rev. B 45, 6376 (1992).
    • (1992) Phys. Rev. B , vol.45 , pp. 6376
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    • 0013320102 scopus 로고    scopus 로고
    • Mater. Sci. Forum 389-393, 589 (2002).
    • (2002) Mater. Sci. Forum , vol.389-393 , pp. 589
  • 26
    • 8744233092 scopus 로고    scopus 로고
    • See also
    • See also: S. Bai et al., Mater. Sci. Forum 457-460, 573 (2004).
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 573
    • Bai, S.1
  • 32
    • 11544321141 scopus 로고
    • and references therein. For a review, see
    • For a review, see: B. G. Yacobi and D. B. Holt, J. Appl. Phys. 59, R1 (1986) and references therein.
    • (1986) J. Appl. Phys , vol.59
    • Yacobi, B.G.1    Holt, D.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.